Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
{"title":"新型ITO/AZO/SiO2/p-Si SIS异质结的研究","authors":"Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin","doi":"10.1109/SOPO.2009.5230104","DOIUrl":null,"url":null,"abstract":"(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction\",\"authors\":\"Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin\",\"doi\":\"10.1109/SOPO.2009.5230104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction
(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics
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