新型ITO/AZO/SiO2/p-Si SIS异质结的研究

Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
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引用次数: 0

摘要

(1. 1 .上海大学物理系舒阳光电实验室,上海200444;摘要采用射频溅射法在p-Si(100)衬底上沉积ITO/AZO双膜,制备ITO/AZO/SiO2/p-Si SIS异质结。采用紫外-可见分光光度计、四点探针和霍尔效应测试分别表征了ITO/AZO薄膜的结构、光学和电学性能。结果表明,ITO/AZO薄膜具有良好的质量。通过I-V测量研究了该异质结的电特性,结果表明该异质结具有良好的整流性能和良好的光电效应。关键词-伊藤;al掺杂ZnO (AZO);溅射;SIS异质结;电流-电压(I-V)特性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction
(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics
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