单晶硅轴内/离轴极化微拉曼光谱的角度分辨强度

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2021-12-31 DOI:10.1155/2021/2860007

Y. Chang, S. He, Mingyuan Sun, Aixia Xiao, Jiaxin Zhao, Lulu Ma, W. Qiu

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引用次数: 2

摘要

单晶硅(c-Si)仍然是与微电子/光电子相关的重要材料。在科学研究和工业应用中，对碳硅材料及其微观结构进行无损检测是非常必要的，而拉曼光谱是必不可少的检测手段。然而，基于特定的固定拉曼几何/极化配置的拉曼测量对于c-Si性能的量化分析是有限的，这使得难以满足先进硅基微电子和光电子的高端要求。角分辨拉曼测量已成为材料、物理、力学、光学等领域实验分析的新趋势。本文系统地分析了c-Si在轴内和离轴构型下的角分辨偏振拉曼散射特性。建立了一个角度分辨拉曼强度的通用理论模型，该模型包含了几个可改变的角度参数，包括样品的倾角、旋转角度以及入射激光和散射光的偏振方向。给出了不同几何形状和极化结构在不同角度下拉曼强度的变化规律。通过典型实验对理论模型进行了验证和标定。此外，本工作为硅基结构上的复杂极化拉曼实验分析提供了可靠的基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.