Xuewei Feng, Yida Li, Lin Wang, Z. Yu, Shuai Chen, W. Tan, Nasiruddin Macadam, G. Hu, X. Gong, T. Hasan, Yong-Wei Zhang, A. Thean, K. Ang
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First Demonstration of a Fully-Printed Mos2Rram on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse
We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 107. The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP).
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