{"title":"用于K波段应用的0.18µm CMOS工艺的除以3注入锁定分频器","authors":"Yu‐Hsin Chang, Yen-Chung Chiang","doi":"10.1109/MWSYM.2015.7166735","DOIUrl":null,"url":null,"abstract":"A divide-by-3 injection-locked frequency divider (ILFD) implemented in the 0.18 μm CMOS process is proposed for K band applications. The proposed ILFD adopts the stacked cross-coupled transistor pair topology to enhance the required frequency component and to reduce dc power consumption. Without the help of varactors, the measured locking range of the proposed ILFD is from 20.4 to 23.8 GHz under 0-dBm input power level. The core circuit dissipates 3.9 mW power from a 1.5-V dc supply.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A divide-by-3 injection-locked frequency divider in 0.18 µm CMOS process for K band applications\",\"authors\":\"Yu‐Hsin Chang, Yen-Chung Chiang\",\"doi\":\"10.1109/MWSYM.2015.7166735\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A divide-by-3 injection-locked frequency divider (ILFD) implemented in the 0.18 μm CMOS process is proposed for K band applications. The proposed ILFD adopts the stacked cross-coupled transistor pair topology to enhance the required frequency component and to reduce dc power consumption. Without the help of varactors, the measured locking range of the proposed ILFD is from 20.4 to 23.8 GHz under 0-dBm input power level. The core circuit dissipates 3.9 mW power from a 1.5-V dc supply.\",\"PeriodicalId\":6493,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Symposium\",\"volume\":\"1 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2015.7166735\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7166735","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A divide-by-3 injection-locked frequency divider in 0.18 µm CMOS process for K band applications
A divide-by-3 injection-locked frequency divider (ILFD) implemented in the 0.18 μm CMOS process is proposed for K band applications. The proposed ILFD adopts the stacked cross-coupled transistor pair topology to enhance the required frequency component and to reduce dc power consumption. Without the help of varactors, the measured locking range of the proposed ILFD is from 20.4 to 23.8 GHz under 0-dBm input power level. The core circuit dissipates 3.9 mW power from a 1.5-V dc supply.
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