采用集成分析(UTOPIA)的统一技术优化平台,在<= 7nm节点上进行整体技术、设计和系统协同优化

S. C. Song, J. Xu, D. Yang, K. Rim, P. Feng, Jerry Bao, J. Zhu, J. Wang, G. Nallapati, M. Badaroglu, P. Narayanasetti, B. Bucki, J. Fischer, G. Yeap
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引用次数: 6

摘要

我们提出完整的技术-设计-系统协同优化方法,其中功率,性能,热,面积和成本指标同时从晶体管到移动SOC系统级进行优化。这种新颖的方法,即使用集成分析的统一技术优化平台(UTOPIA),除了作者之前的晶体管互连优化方法外,还结合了热限制性能,晶圆工艺复杂性和芯片面积缩放模型。在乌托邦热模型评估/优化设备和技术参数,不仅为峰值频率,而且为热节流后的持续性能。使用所提出的UTOPIA方法选择最佳N7技术,显示出比N10技术显着的总体增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unified Technology Optimization Platform using Integrated Analysis (UTOPIA) for holistic technology, design and system co-optimization at <= 7nm nodes
We propose complete technology-design-system co-optimization method in which power, performance, thermal, area and cost metrics are all simultaneously optimized from transistor to mobile SOC system level. This novel method, Unified Technology Optimization Platform using Integrated Analysis (UTOPIA), incorporates thermally limited performance, wafer process complexity and die area scaling model in addition to author's previous transistor-interconnect optimization method. Thermal model in UTOPIA evaluates/optimizes device and technology parameters not only for peak frequency but also for sustained performance after thermal throttling. Optimum N7 technology is selected using proposed UTOPIA method, showing significant overall gain over N10 technology.
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