半导体量子阱中光诱导双激子能量位移

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. Pub Date : 2003-06-06 DOI:10.1109/QELS.2003.238398

I. Rumyantsev, N. Kwong, R. Takayama, R. Binder, M. Phillips, H. Wang

{"title":"半导体量子阱中光诱导双激子能量位移","authors":"I. Rumyantsev, N. Kwong, R. Takayama, R. Binder, M. Phillips, H. Wang","doi":"10.1109/QELS.2003.238398","DOIUrl":null,"url":null,"abstract":"The energy level shift of a coherent biexciton (bound two-exciton state) in a semiconductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.","PeriodicalId":20418,"journal":{"name":"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.","volume":"8 1","pages":"2 pp.-"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optically induced biexciton energy shift in semiconductor quantum wells\",\"authors\":\"I. Rumyantsev, N. Kwong, R. Takayama, R. Binder, M. Phillips, H. Wang\",\"doi\":\"10.1109/QELS.2003.238398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The energy level shift of a coherent biexciton (bound two-exciton state) in a semiconductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.\",\"PeriodicalId\":20418,\"journal\":{\"name\":\"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.\",\"volume\":\"8 1\",\"pages\":\"2 pp.-\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/QELS.2003.238398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/QELS.2003.238398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对半导体中相干双激子(束缚双激子态)的能级漂移进行了实验观察和理论分析。这种由激子的存在引起的位移，可能与底层激子状态的AC Stark位移有关。

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Optically induced biexciton energy shift in semiconductor quantum wells

The energy level shift of a coherent biexciton (bound two-exciton state) in a semiconductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.

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来源期刊

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.

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