离散动态负载调制GaN功率放大器的厚膜MIM BST变容

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-04 DOI:10.1109/MWSYM.2017.8059097

S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson

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引用次数: 4

摘要

由于其极低的静态电流消耗，基于BST的变容管是实现可调谐和可重构组件的完美器件。这项工作提出了完全丝网印刷的MIM厚膜BST变容管，用于调整GaN hemt的负载阻抗。变容管调谐电压采用高速氮化镓调制器，以离散步骤提供。对LTE和WCDMA信号的调制测量首次显示了基于bst的负载调制系统的功能和负载调制在动态运行中的功耗。使用离散动态负载调制，在ACLR低于- 45 dB的LTE信号中，平均PAE为27.3%。

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Thick-film MIM BST varactors for GaN power amplifiers with discrete dynamic load modulation

Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.

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2017 IEEE MTT-S International Microwave Symposium (IMS)

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