Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon

The method of IR-absorption is used to study the increase of efficiency of the introduction of vacancy-oxygen (VO) complexes in silicon at electron irradiation with the growth of the concentration of boron and carbon impurities. The dose dependences of the change of concentrations of substitutional carbon, interstitial oxygen, and of CO complexes are obtained. On the basis of results gained a quantitative model is proposed of radiation defect formation in silicon containing sinks for intrinsic interstitial atoms (boron, carbon, and others). The model involves the conception on annihilation of vacancies (V) and interstitial atoms of silicon (I) on defect centers. A numerical calculation of the kinetics of defect formation and of the change of impurity states in silicon under irradiation is made. The kinetic parameters of the processes are found from a comparison of the calculation with experimental data. The values obtained of reaction constants show the possibility of prediction of radiation defects accumulation in silicon with different impurity content. [Russian Text Ignore]