二维T ' -MoTe2单层c波段可饱和吸收集成光子学分析

Netcom Pub Date : 2023-07-30 DOI:10.1109/OMN/SBFotonIOPC58971.2023.10230942

Maria Carolina Volpato, P. de Assis, N. Frateschi

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引用次数: 0

摘要

我们研究了IT ' -MoTe2作为硅光子器件的可饱和吸收剂的潜力。通过优化二维材料与波导之间的耦合系数，我们实现了18%的最大耦合。利用载流子统计计算，我们估计在1560nm处每个有效相互作用长度的饱和强度为7.5MW/cm2·nm。我们的模拟表明，优化后的波导中的饱和强度约为13MW/cm2。

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Analysis of Integrated Photonics with Saturable Absorption in the C-Band Employing 2D 1 T’-MoTe2 Monolayer

We investigate the potential of IT’-MoTe2 as a saturable absorber for silicon photonics devices. By optimizing the coupling coefficient between the 2D material and the wave-guide, we achieve a maximum coupling of 18%. Utilizing carrier statistics calculations, we estimate the saturation intensity per effective interaction length as 7.5MW/cm2·nm at 1560nm. Our simulation suggests that the saturation intensity in an optimized waveguide reaches approximately 13MW/cm2.

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来源期刊

Netcom

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0.00%

发文量

审稿时长

18 weeks