绝缘体上硅光子晶体的聚焦离子束铣削

Wenbin Hu, W. Hopman, R. Ridder
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引用次数: 0

摘要

利用聚焦离子束(FIB)铣削技术,在绝缘体硅(SOI)上制备了由直径为亚微米的圆孔阵列组成的光子晶体板。这种应用要求孔的侧壁非常光滑,并尽可能接近垂直于板。孔的形状受到研磨材料再沉积的不利影响。研究了波束电流、停留时间、扫描方式等不同FIB参数对侧壁形状的影响。结果表明,螺旋形扫描模式的扫描效果比传统的比例扫描要好得多。确定了停留时间、光束电流和扫描环路数量的组合,以优化孔的几何形状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Focused ion beam milling of photonic crystals in silicon on insulator
A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. The shape of holes is adversely affected by redeposition of milled material. The effects on the sidewall shape due to different FIB parameters, such as beam current, dwell time, and scanning pattern have been researched. It is shown that a spiral-shaped scanning pattern performs much better than the conventional rater scan. A combination of dwell time, beam current and number of scanning loops, optimising the geometry of holes, has been determined.
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