提出了将部分TSC曲线重构为部分全曲线的方法，以便准确评价

ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132) Pub Date : 1998-06-22 DOI:10.1109/ICSD.1998.709260

Y. Kamitani, S. Maeta, M. Yoshiura, F. Yoshida

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引用次数: 1

摘要

提出了一种新颖的理论，可以从部分TSC曲线理论上高精度地计算载流子陷阱的能量深度E/ t/、逃逸频率因子/spl nu/和载流子陷阱位置密度n三个参数。如何构建标准一直是一个最重要的结果点。

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Proposal of reconstructing method of partial TSC curves to some full curves for accurate evaluation

An original theory that three parameters, the energy depths of carrier traps E/sub t/, the escape frequency factor /spl nu/ and the density of carrier trap site n, can be theoretically evaluated with high accuracy from partial TSC curves is proposed. How the standard can be constructed has been a most important resultant point.

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ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)

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