采用三维非均质集成技术制备q波段InP/CMOS接收机和发射机波束形成通道

A. Carter, M. Urteaga, Z. Griffith, K. J. Lee, J. Roderick, P. Rowell, J. Bergman, S. Hong, B. Patti, C. Petteway, G. Fountain
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引用次数: 7

摘要

采用250 nm InP hts和130 nm Si CMOS在三维晶圆堆叠平台上制备了q波段接收和发射波束形成通道。室温面对面晶圆键合是使用2.5微米宽,5微米间距的铜镶嵌在二氧化硅中的混合键合技术(Direct Bond Interconnect®)来完成的,以形成电活性垂直互连。对3位振幅调制和4位相位调制的接收和发射信道进行了表征。在40 GHz时,接收和发射链的增益大于25 dB,具有6 dB可变增益调谐,相位误差小于5°RMS。发射机饱和输出功率为20.3 dBm。据作者所知,这是硅和InP mmic面向射频波束成形应用的晶圆级三维集成的第一次演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Q-band InP/CMOS receiver and transmitter beamformer channels fabricated by 3D heterogeneous integration
Q-Band receiver and transmitter beamformer channels using 250 nm InP HBTs and 130 nm Si CMOS have been fabricated in a three-dimensional wafer-stacking platform. Room-temperature face-to-face wafer bonding is accomplished using a hybrid bonding technique (Direct Bond Interconnect®) of 2.5 micron wide, 5 micron pitch copper inlaid in silicon dioxide to form electrically active vertical interconnects. 3-bit amplitude and 4-bit phase modulation receive and transmit channels are characterized. At 40 GHz, the receiver and transmitter chains have more than 25 dB gain, with 6 dB variable gain tuning, and less than 5° RMS phase error. The transmitter saturated output power is 20.3 dBm. To the authors' knowledge, this is the first demonstration of wafer-scale three-dimensional integration of Si and InP MMICs towards RF beamforming applications.
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