Wan-Yao Wu, Chia-Hsiang Chen, Chia-Hao Hsu, Shih-yuan Wei, Chien-Hsu Chen, Yun-chung Wu, T. Hong, H. Niu, C. Lai
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The effect of Na ion implantation on the polycrystalline CuIn1−xGaxSe2
In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.
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