非晶硅基太阳能电池制备的实时表征

Yiwei Lu, Sangbo Kim, I. Chen, Yeeheng Lee, C. Fortmann, C. Wronski, R. Collins
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引用次数: 0

摘要

采用实时椭偏光谱(RTSE)技术对非晶硅基太阳能电池的p层和i层进行了表征。本研究在太阳能电池制备过程中获得了椭圆偏振角(/spl Psi/, /spl Delta/)下的106点(1.5-4.5 eV)光谱,采集时间和重复时间分别短至160 ms和1 s。利用光谱能力,可以确定微观结构的演变,包括空洞密度,表面粗糙度和体层厚度,后者具有亚单层灵敏度。此外,还可以确定各层的复介电函数和光隙。在p层和i层生长之间的Ar冲刷期形成超薄(质量厚度/spl sim/4 /spl Aring/)窄间隙界面层,可以降低太阳能电池的开路电压和短路电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Real time characterization of the preparation of amorphous silicon-based solar cells
Real time spectroscopic ellipsometry (RTSE) has been applied to characterize the p and i layers that compose amorphous silicon-based solar cells prepared in the superstrate configuration using a single-chamber reactor system. In this study, 106-point spectra (1.5-4.5 eV) in the ellipsometry angles (/spl Psi/, /spl Delta/) are obtained during solar cell preparation with acquisition and repetition times as short as 160 ms and 1 s, respectively. With the spectroscopic capability, the evolution of the microstructure can be determined, including void densities, and surface roughness and bulk layer thicknesses, the latter with submonolayer sensitivity. In addition, the complex dielectric function and optical gap of the individual layers can be determined. An ultrathin (mass thickness /spl sim/4 /spl Aring/) narrow gap interface layer is observed to form during an Ar flushing period between the growth of the p and i layers, which may reduce the open-circuit voltage and short-circuit current of the solar cell.
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