集成电路键合用铜纳米材料的形貌控制

J. Wen, Yanhong Tian, Zhi Jiang
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引用次数: 0

摘要

以硼氢化钾(KBH4)为还原剂,制备了纳米铜糊作为电力电子器件的连接材料。讨论了反应时间、前驱体([Cu(NH3)4]SO4)或还原剂(KBH4)浓度、表面活性剂(聚乙烯吡罗烷酮、PVP)浓度等因素对纳米铜形貌的影响。同时讨论了这些因素对制备纯铜纳米材料、铜纳米材料的生长过程和相演化的影响。本文从反应时间和反应温度两个方面对控制铜纳米线的形貌得出了一些新的结论。这种简单可行的制备纳米材料的方法并不局限于器件连接,它在印刷电子、透明导电薄膜甚至智能电子方面都有应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Morphology control of copper nanomaterials for IC bonding
Copper nanoparticles paste was prepared as inconnection materials of power electronics using potassium borohydride (KBH4) as reduction. Various influences on the morpholorgy of copper nanoparticles were discussed, such as reaction time, concentration of precursor ([Cu(NH3)4]SO4) or reducing agent (KBH4) and surfactant (polyvinyl pyrrolidone, PVP). Meanwhile, those influence to preparing pure copper nanomaterials, the growth process and phase evolution of copper nanomaterials were discussed. Some new conclusions about controlling the morphology of copper nanowires were drawn about reaction time and reaction temperature. This simple and feasible method of preparing nanomaterials are not limited to devices bonging, which have applications in printing electronics, transparent conducting films and even smart electronics.
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