R. Maiti, C. Patil, T. Xie, Javad G. Azadani, R. Amin, M. Miscuglio, D. van Thourhout, T. Low, S. Bank, V. Sorger
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Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm
Here we show how strain-engineering (∼4% tensile strain) lowers the bandgap (−0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz2.
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