{"title":"可调高隔离w波段带阻滤波器","authors":"M. Hickle, M. Sinanis, D. Peroulis","doi":"10.1109/MWSYM.2015.7166981","DOIUrl":null,"url":null,"abstract":"Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Tunable high-isolation W-band bandstop filters\",\"authors\":\"M. Hickle, M. Sinanis, D. Peroulis\",\"doi\":\"10.1109/MWSYM.2015.7166981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.\",\"PeriodicalId\":6493,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave Symposium\",\"volume\":\"14 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2015.7166981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7166981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.