G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts
{"title":"Al/sub x/Ga/sub 1-x/As/GaAs和GaAs/ in /sub y/Ga/sub 1-y/As材料体系中量子阱太阳能电池的电压性能","authors":"G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts","doi":"10.1109/WCPEC.1994.520648","DOIUrl":null,"url":null,"abstract":"The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems\",\"authors\":\"G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts\",\"doi\":\"10.1109/WCPEC.1994.520648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.\",\"PeriodicalId\":20517,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCPEC.1994.520648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems
The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.