可控p压下未掺杂InP的退火和体晶生长:制备未掺杂SI InP的前景?

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147285

G. Hirt, D. Hofmann, F. Mosel, N. Schafer, G. Muller

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引用次数: 0

摘要

可重复制备名义上未掺杂的半绝缘InP。研究了大量未掺杂InP样品在可控磷压下退火前后的电学性能。光谱研究表明，铁在退火过程中被掺入，但为了解释电数据，必须考虑到天然缺陷。通过对InP中固有缺陷的研究和不同化学计量晶体的PL测量，给出了控制磷压下未掺杂半绝缘InP生长的前景。

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Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?

Nominally undoped semi-insulating InP is prepared reproducibly. The electrical properties of a large series of undoped InP samples, before and after annealing under controlled phosphorus pressure, are presented. Spectroscopic investigations show that iron is incorporated during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Based on a survey of intrinsic defects in InP and on PL measurements of crystals with different stoichiometries, a perspective is given for the growth of undoped semi-insulating InP under controlled phosphorus pressure.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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