F. Urban, F. Gity, P. Hurley, N. McEvoy, A. Di Bartolomeo
{"title":"超薄PtSe2薄膜的各向同性导电和负光导","authors":"F. Urban, F. Gity, P. Hurley, N. McEvoy, A. Di Bartolomeo","doi":"10.1063/5.0021009","DOIUrl":null,"url":null,"abstract":"PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe$_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO$_2$ and at the Si/SiO$_2$ interface.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"12 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Isotropic conduction and negative photoconduction in ultrathin PtSe2 films\",\"authors\":\"F. Urban, F. Gity, P. Hurley, N. McEvoy, A. Di Bartolomeo\",\"doi\":\"10.1063/5.0021009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe$_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO$_2$ and at the Si/SiO$_2$ interface.\",\"PeriodicalId\":8423,\"journal\":{\"name\":\"arXiv: Applied Physics\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0021009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0021009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Isotropic conduction and negative photoconduction in ultrathin PtSe2 films
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe$_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO$_2$ and at the Si/SiO$_2$ interface.
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