氧化铪对10nm DG soin FinFET的建模与仿真

2021 IEEE 21st International Conference on Nanotechnology (NANO) Pub Date : 2021-07-28 DOI:10.1109/NANO51122.2021.9514308

A. Lazzaz, K. Bousbahi, M. Ghamnia

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引用次数: 3

摘要

本文利用SILVACO TCAD Atlas软件，对10 nm氧化铪的dgsoi (Semiconductor On Insulator) N FinFET进行了建模和仿真。主要的关键参数，如离子，IOFF进行评估，以估计设备的性能。10 nm节点采用Berkeley PTM (Predictive Technology Model)参数。

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Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide

This paper explores the modeling and simulation of DG SOI (Semiconductor On Insulator) N FinFET 10 nm with Hafnium Oxide by using SILVACO TCAD Atlas Software. The major critical parameters like ION, IOFF are evaluated in order to estimate the performance of the device. The Berkeley PTM (Predictive Technology Model) parameters for 10 nm nodes are used.

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2021 IEEE 21st International Conference on Nanotechnology (NANO)

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