未掺杂ZnO与掺杂不同浓度ZnO薄膜的比较研究,经过适当的UHV处理,并通过XPS, AES, Reels和PL等敏感光谱技术进行了表征

K. B. Bensassi, Edhawya Hameurlaine, M. Guezzoul, M. Bouslama, Abdallah Ouerdane, A. Belaidi, Amira Derri, M. Bedrouni, A. Baizid, M. Abdelkrim, B. Kharoubi
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引用次数: 1

摘要

摘要在本研究中,我们利用互补和灵敏的实验技术XPS (x射线光电子能谱)、AES(俄格电子能谱)、REELS(反射电子能量损失能谱)和PL(光致发光)来研究和比较未掺杂ZnO (UZO)和铟掺杂ZnO (IZO) (4% In;6%在薄膜中。采用喷雾法在Si衬底上生长这些薄膜。处理过程UHV(超高真空:Ar+溅射,然后连续加热至650°C)进行。XPS和AES结果证实了样品的清洁状态,以及铟在ZnO基体中的掺入形成了(In-O-Zn)型化学物质。不同一次能下记录的REELS光谱和PL测量结果表明,UHV处理对改善IZO (6% In)的物理结构起着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Comparative Study of Un-Doped ZnO and in Doping ZnO Thin Films with Various Concentrations, Subjected to Appropriate UHV Treatment and Characterized by Sensitive Spectroscopy Techniques XPS, AES, Reels and PL
Abstract In this study, we use complementary and sensitive experimental techniques XPS (X-rays Photoelectron Spectroscopy), AES (Auger Electron Spectroscopy, REELS (Reflection Electron Energy-Loss Spectroscopy) and PL (photoluminescence) to investigate and compare the chemical, structure, electronic and optical properties of Un-doped ZnO (UZO) and Indium-doped ZnO (IZO) (4% In; 6% In) thin films. Spray method is used for the growth of these thin films on Si substrate. A treatment process UHV (Ultra-High -Vacuum: Ar+ sputtering followed by checked successive heating until 650°C) is performed. XPS and AES results allow to confirm the clean state of samples and the incorporation of indium into the ZnO matrix to form chemical species of (In-O-Zn) type. The recorded REELS spectra at different primary energies and the PL measurements justify that the UHV treatment plays an important role to improve the physical structure of IZO (6% In).
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