环振失效的中线工艺研究

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI:10.1109/ASMC49169.2020.9185254

V. Chan, M. Bergendahl, S. Choi, A. Gaul, J. Strane, A. Greene, J. Demarest, J. Li, C. Le, S. Teehan, D. Guo

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引用次数: 0

摘要

在CMO技术的研究阶段，环形振荡器(ROs)用于良率学习。我们进行了横截面分析，发现开放缺陷和短缺陷都在线栅结构的中间。本文将讨论与MOL或先前工艺有关的缺陷，以及设计和密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Middle of Line (MOL) Process Investigation in Ring Oscillator failure

Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to MOL or prior processes, as well as the design and density, will be discussed in the paper.

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2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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