{"title":"如何改善EUV光刻中的“化学随机”?","authors":"Toru Fujimori","doi":"10.1109/CSTIC49141.2020.9282490","DOIUrl":null,"url":null,"abstract":"Extreme ultraviolet (EUV) lithography is almost ready for realize 7nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choices of EUV resist materials that are capable of resolving below 15nm half pitch with high sensitivity. However, the performances of EUV resist materials are still not enough for the true HVM requirements. One critical issue is ‘Chemical stochastic’, which will be become ‘defectivity’. We report herein how to improve ‘Chemical Stochastic’.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"How to Improve ‘Chemical Stochastic’ in EUV Lithography ?\",\"authors\":\"Toru Fujimori\",\"doi\":\"10.1109/CSTIC49141.2020.9282490\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extreme ultraviolet (EUV) lithography is almost ready for realize 7nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choices of EUV resist materials that are capable of resolving below 15nm half pitch with high sensitivity. However, the performances of EUV resist materials are still not enough for the true HVM requirements. One critical issue is ‘Chemical stochastic’, which will be become ‘defectivity’. We report herein how to improve ‘Chemical Stochastic’.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"28 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282490\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282490","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
How to Improve ‘Chemical Stochastic’ in EUV Lithography ?
Extreme ultraviolet (EUV) lithography is almost ready for realize 7nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choices of EUV resist materials that are capable of resolving below 15nm half pitch with high sensitivity. However, the performances of EUV resist materials are still not enough for the true HVM requirements. One critical issue is ‘Chemical stochastic’, which will be become ‘defectivity’. We report herein how to improve ‘Chemical Stochastic’.
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