Sheng‐Wen Wang, D. Lin, Chia-Yu Lee, Che-yu Liu, Y. Lan, H. Kuo, Shing-chung Wang
{"title":"具有p-n量子势垒的InGaN/GaN多量子阱对蓝色发光二极管效率下降的影响","authors":"Sheng‐Wen Wang, D. Lin, Chia-Yu Lee, Che-yu Liu, Y. Lan, H. Kuo, Shing-chung Wang","doi":"10.1364/CLEO_AT.2013.JW2A.94","DOIUrl":null,"url":null,"abstract":"In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.","PeriodicalId":10254,"journal":{"name":"CLEO: 2013","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue light-emitting diodes\",\"authors\":\"Sheng‐Wen Wang, D. Lin, Chia-Yu Lee, Che-yu Liu, Y. Lan, H. Kuo, Shing-chung Wang\",\"doi\":\"10.1364/CLEO_AT.2013.JW2A.94\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.\",\"PeriodicalId\":10254,\"journal\":{\"name\":\"CLEO: 2013\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CLEO: 2013\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/CLEO_AT.2013.JW2A.94\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CLEO: 2013","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEO_AT.2013.JW2A.94","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue light-emitting diodes
In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.