具有p-n量子势垒的InGaN/GaN多量子阱对蓝色发光二极管效率下降的影响

Sheng‐Wen Wang, D. Lin, Chia-Yu Lee, Che-yu Liu, Y. Lan, H. Kuo, Shing-chung Wang
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引用次数: 0

摘要

在本研究中,提出了在不同位置具有p-n量子势垒的InGaN/GaN多量子阱(mqw)结构,以研究蓝色发光二极管(led)的效率下降行为。模拟电场图表明,被p-n量子势垒夹在中间的量子阱的电场比其他量子阱的电场要小,这是由于原始的极化相关电场被p-n量子势垒的内置电场部分抵消了。此外,仿真结果表明,通过选择合适的p-n量子势垒位置,可以有效改善载流子的分布;因此,下垂行为也可以被抑制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue light-emitting diodes
In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.
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