无cd缓冲层对CuInSe/ sub2 /薄膜太阳能电池的影响

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.519856

T. Nii, I. Sugiyama, T. Kase, M. Sato, Y. Kaniyama, S. Kuriyagawa, K. Kushiya, H. Takeshita

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引用次数: 3

摘要

为了改善CIS薄膜太阳能电池中n-ZnO窗口层与p-CuInSe/sub 2/ (CIS)薄膜吸收剂之间的界面质量，本研究采用化学浴沉积(CBD)方法制备了ZnO缓冲层，作为制备无cd薄膜太阳能电池的方法之一。优化CBD-ZnO的制备条件，使其效率达到10%左右。这些结果表明，CBD-ZnO缓冲层具有较高的制备高效CIS薄膜太阳能电池的能力。

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Effects of Cd-free buffer layer for CuInSe/sub 2/ thin-film solar cells

A ZnO buffer layer by a chemical-bath deposition (CBD) method is developed in this study to improve the interface quality between the n-ZnO window layer and p-CuInSe/sub 2/ (CIS) thin-film absorber in CIS thin-film solar cells as one of the approaches to the fabrication of Cd-free thin-film solar cells. The optimization of the fabrication conditions of CBD-ZnO leads to an efficiency of about 10%. These results indicate that the CBD-ZnO buffer layer has a rather high capability to fabricate high-efficiency CIS thin-film solar cells.

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来源期刊

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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