一种降低电荷损耗的新型嵌入式闪存的可靠性研究

2017 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2017-03-01 DOI:10.1109/CSTIC.2017.7919738

Lingling Shao, Y. Zhao, Wei Han, W. Chien

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引用次数: 0

摘要

本文研究了传统嵌入式快闪记忆体在超过20个程序/擦除周期后的读取压力和待机状态导致读取“0”失败的机制。为解决这一问题，提出了一种新型的反漏源电池式电子闪光器件。本文研究了传统和新型e-flash的可靠性性能。实验结果表明，新设计的e-flash在数据保存、耐用性和多层次操作潜力等方面具有优异的性能。

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A reliability study of a new embedded flash to reduce charge-loss issue

We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.

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2017 China Semiconductor Technology International Conference (CSTIC)

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