CdO-CuO薄膜异质结输运性质研究

International Conference on Advanced Nanomaterials & Emerging Engineering Technologies Pub Date : 2013-07-24 DOI:10.1109/ICANMEET.2013.6609347

C. Debnath, K. L. Bhowmi, B. Sah

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引用次数: 1

摘要

制备了CuO和CdO薄膜用于异质结的制备。采用射频磁控溅射技术制备薄膜。该结具有优异的电学性能，特别是氧化铜的电学性能得到了很大的影响和提高。载流子扩散和通过界面电位的载流子隧穿导致异质结具有优异的电学性能。这些类型的异质结构是不同器件应用的潜在候选者，如场发射显示和光电子器件。

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Studies on transport properties of CdO-CuO thin film hetero junction

Thin film of CuO and CdO were prepared for making heterojunction. The films were prepared by radio frequency magnetron sputtering technique. The junction shows outstanding electrical properties and particularly the electrical properties of CuO were found to be highly effected and enhanced. Carrier diffusion and carrier tunnelling through the interface potential lead to the outstanding electrical properties of the heterojunction. These types of heterostructures are potential candidate for different device applications such as field emission display and optoelectronic devices.

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International Conference on Advanced Nanomaterials & Emerging Engineering Technologies

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