Д. Д. Ефимов, В.А. Комаров, Н.С. Каблукова, Е. В. Демидов, М. В. Старицын
{"title":"粘合剂和单晶合金薄膜","authors":"Д. Д. Ефимов, В.А. Комаров, Н.С. Каблукова, Е. В. Демидов, М. В. Старицын","doi":"10.21883/ftp.2022.02.51953.20a","DOIUrl":null,"url":null,"abstract":"We investigated the effect of the antimony underlayer (10 nm) on the structure and galvanomagnetic properties of bismuth-antimony solid solution thin films (3-12 at.% Sb). The films were obtained on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"20 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Блочные и монокристаллические пленки сплава висмут--сурьма 3-12 ат% с подслоем сурьмы\",\"authors\":\"Д. Д. Ефимов, В.А. Комаров, Н.С. Каблукова, Е. В. Демидов, М. В. Старицын\",\"doi\":\"10.21883/ftp.2022.02.51953.20a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the effect of the antimony underlayer (10 nm) on the structure and galvanomagnetic properties of bismuth-antimony solid solution thin films (3-12 at.% Sb). The films were obtained on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2022.02.51953.20a\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2022.02.51953.20a","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Блочные и монокристаллические пленки сплава висмут--сурьма 3-12 ат% с подслоем сурьмы
We investigated the effect of the antimony underlayer (10 nm) on the structure and galvanomagnetic properties of bismuth-antimony solid solution thin films (3-12 at.% Sb). The films were obtained on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.