利用金属-氧化物-金属电容中工艺和设计相关的可变性来实现集成电路中的固有和无数据库水印

A. Shylendra, S. Bhunia, A. Trivedi
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引用次数: 4

摘要

集成电路(IC)认证以验证其完整性已成为解决供应链中与假冒IC相关的日益严重的问题的关键需求。本文提出了一种新的基于SAR-ADC的无数据库内禀认证方案。该技术利用电荷再分配SAR ADC中使用的后端电容的失配来生成身份验证签名。BEOL金属-氧化物-金属(MOM)电容器是工艺变化信息的可靠来源,对老化和温度引起的变化不太敏感。线边缘粗糙度是BEOL电容器失配的主要来源,因此,从LER和几何参数的角度分析了电容器失配的变化。所提出的修改ADC架构以整合认证能力所产生的资源开销是最小的,并且使用现有的片上校准电路来提取签名。建议的技术不需要复杂的测试设置,因此简化了身份验证过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Intrinsic and Database-free Watermarking in ICs by Exploiting Process and Design Dependent Variability in Metal-Oxide-Metal Capacitances
Authentication of integrated circuits (IC) to verify their integrity has emerged as a critical need to address increasing concerns associated with counterfeit ICs in the supply chain. In this paper, novel SAR-ADC based intrinsic and database-free authentication scheme has been proposed. Proposed technique utilizes mismatch in back end of line (BEOL) capacitors used in charge-redistribution SAR ADC to generate authentication signature. BEOL metal-oxide-metal (MOM) capacitors form a reliable source of process variation information and are less sensitive to aging & temperature induced variations. Line edge roughness is the primary source of mismatch in BEOL capacitors and thus, capacitor mismatch variation has been analyzed in terms of LER and geometric parameters. Resource overhead incurred by the proposed modifications to the ADC architecture to incorporate authentication ability is minimal and existing on-chip calibration circuitry is used to extract signature. Proposed technique does not require sophisticated test setup, thereby, simplifying the authentication procedure.
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