n掺杂GeSe单层负差分电阻行为的理论研究

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Caixia Guo, Wenlong Jiao, Tianxing Wang
{"title":"n掺杂GeSe单层负差分电阻行为的理论研究","authors":"Caixia Guo, Wenlong Jiao, Tianxing Wang","doi":"10.1080/07315171.2023.2189850","DOIUrl":null,"url":null,"abstract":"Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer\",\"authors\":\"Caixia Guo, Wenlong Jiao, Tianxing Wang\",\"doi\":\"10.1080/07315171.2023.2189850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2023-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2023.2189850\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2023.2189850","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

采用非平衡格林函数(NEGF)和密度泛函理论(DFT)相结合的方法,系统地研究了n掺杂GeSe单层的电子结构和输运特性。计算的能带结构表明,N原子的掺杂使GeSe单层从半导体变为金属。此外,在n掺杂GeSe基器件的电压-电流曲线中发现了明显的负差分电阻行为(NDR)。此外,电流峰谷比(PVR)随N原子掺杂浓度的变化而变化。随着掺杂浓度的降低,NDR峰向毫伏区偏移。特别是当掺杂浓度降至0.69%时,PVR高达103的NDR行为进入mV偏置区。这些结果为设计基于GeSe单层的低功耗纳米器件提供了一种新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer
Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Ferroelectrics Letters Section
Ferroelectrics Letters Section 物理-物理:凝聚态物理
CiteScore
1.10
自引率
0.00%
发文量
1
审稿时长
4.8 months
期刊介绍: Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信