{"title":"n掺杂GeSe单层负差分电阻行为的理论研究","authors":"Caixia Guo, Wenlong Jiao, Tianxing Wang","doi":"10.1080/07315171.2023.2189850","DOIUrl":null,"url":null,"abstract":"Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer\",\"authors\":\"Caixia Guo, Wenlong Jiao, Tianxing Wang\",\"doi\":\"10.1080/07315171.2023.2189850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2023-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2023.2189850\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2023.2189850","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer
Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.
期刊介绍:
Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals.
Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.