恒定和交变电场下超薄量子阱中的电子隧穿

J. Kundrotas, A. Dargys
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引用次数: 14

摘要

计算了一维超薄量子阱瞬时外加电场后电子隧穿概率随时间的变化。束缚在这种量子波上的电子波函数的特征是在量子波的两侧有较大的指数尾。通过精确地求解随时间变化的薛定谔方程,证明了隧穿速率大大大于标准近似所预测的隧穿速率。这一特性可能有助于构建基于孤立量子阱的新型超高速固态器件。[忽略俄语文本]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron Tunneling from an Ultrathin Quantum Well in Constant and Alternating Electric Fields
The change of electron tunneling probability with time after instantaneous application of an electric field is calculated for a one-dimensional ultrathin quantum well (QW). The electronic wave function bound to such QW is characterized by relatively large exponential tails on both sides of the QW. By solving the time dependent Schrodinger equation exactly, it is demonstrated that the tunneling rate is substantially larger than that predicted by standard approximations. This property may appear useful in constructing new ultrahigh-speed solid state devices based on isolated QWs. [Russian Text Ignored].
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