{"title":"高通量下富勒烯的稀有气体注入与破坏","authors":"V. Hnatowicz, J. Vacik, D. Fink, R. Klett","doi":"10.1080/10641220009351414","DOIUrl":null,"url":null,"abstract":"Abstract 100 keV Ar+and Kr+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles move to the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up to 375 °C no significant changes of the depth profiles were observed.","PeriodicalId":12470,"journal":{"name":"Fullerene Science and Technology","volume":"99 1","pages":"279 - 287"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Rare-Gas Implantation and Damage of Fullerene at High Fluence\",\"authors\":\"V. Hnatowicz, J. Vacik, D. Fink, R. Klett\",\"doi\":\"10.1080/10641220009351414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract 100 keV Ar+and Kr+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles move to the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up to 375 °C no significant changes of the depth profiles were observed.\",\"PeriodicalId\":12470,\"journal\":{\"name\":\"Fullerene Science and Technology\",\"volume\":\"99 1\",\"pages\":\"279 - 287\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fullerene Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/10641220009351414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fullerene Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10641220009351414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Rare-Gas Implantation and Damage of Fullerene at High Fluence
Abstract 100 keV Ar+and Kr+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles move to the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up to 375 °C no significant changes of the depth profiles were observed.
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