环保用纳米晶In2O3厚膜二氧化氮气敏性能研究

S. Kulkarni, D. K. Halwar
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引用次数: 0

摘要

本研究采用溶胶-凝胶法制备了立方结构的纳米晶In2O3粉体。在氧化铝衬底上制备了In2O3粉末的厚膜样品。采用一种低成本、简单的丝网印刷方法制作薄膜样品。制备的样品在700 ~ 850℃的不同温度下进行烧制,升温50℃。这个温度范围保证了薄膜在氧化铝基板上更好的附着力。x射线衍射(XRD)分析表明,该材料具有沿(222)取向的立方相。电学表征研究证实了薄膜样品的n型半导体性质。与在不同温度下烧制的薄膜样品相比,在700℃下烧制的薄膜样品的电阻率相对较低。发现颗粒尺寸小,表面积大。扫描电镜(SEM)形貌研究表明,随着烧结温度的升高,颗粒尺寸也逐渐增大。在700°C下烧制的膜样品在100°C操作温度下对100ppm浓度的二氧化氮气体也表现出更高的灵敏度和选择性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nitrogen Dioxide Gas Sensing Properties of Nanocrystalline In2O3 Thick Films for Environmental Protection
The Sol–gel method was utilised to synthesise the nanocrystalline In2O3 powder with a cubic structure in the current study. Thick film samples of In2O3 powder were prepared on an alumina substrate. A low-cost and straightforward screen-printing method was used for making the film samples. The prepared samples were subjugated to firing at different temperatures in a range of 700 to 850 °C with 50 °C increment. This temperature range assured much better adhesion of films on the alumina substrate. The X-ray diffraction (XRD) study revealed the cubic phase along (222) orientation. The electrical characterization study confirmed the n-type semiconducting nature of the film samples. The film samples fired at 700 °C showed a relatively low resistivity compared to those fired at different temperatures. The particle size was found small with an enormous surface area. The morphology study using scanning electron microscopy (SEM) showed that the particle size also increased as the firing temperature was increased. Film samples fired at 700 °C were also exhibited higher sensitivity and selectivity for nitrogen dioxide gas of 100 ppm concentration at 100 °C operating temperature.
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