具有非重叠结构和凹槽通道的1T DRAM单元的研究

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562554

Sang Wan Kim, Garam Kim, Wonjoo Kim, Hyoungsoo Ko, Byung-Gook Park

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引用次数: 0

摘要

本文提出了一种无重叠结构、凹槽沟道的无电容1T DRAM单元晶体管。由于栅极和源漏之间的非重叠结构，在保持状态下可以有效地抑制栅极感应漏电流。这导致在25°C下保持时间超过1 s，在85°C下保持时间超过100 ms

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Investigation of 1T DRAM cell with non-overlap structure and recessed channel

In this paper, a capacitor-less 1T DRAM cell transistor with non-overlap structure and recessed channel is presented. Because of the non-overlap structure between gate and source/drain, GIDL (Gate Induced Drain Leakage) current is efficiently suppressed at hold condition. This results in more than 1 s retention time at 25 °C and 100 ms at 85 °C

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2010 Silicon Nanoelectronics Workshop

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