TiB2和b4c靶材直流磁控溅射制备Ti-B-C薄膜的结构与性能

2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP) Pub Date : 2021-09-05 DOI:10.1109/NAP51885.2021.9568512

V. Ivashchenko, A. Onoprienko, P. Scrynskyy, Andriy Kozak, E. Olifan, A. Kovalchenko, A. Sinelnitchenko, Alexander Marchuk

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引用次数: 0

摘要

采用TiB2和b4c靶材的双直流磁控溅射技术，在Si(100)衬底上制备了Ti-B-C体系薄膜。在沉积过程中，TiB2靶材的溅射参数不变，而b4c靶材的溅射电流在50 ~ 200 mA范围内变化。从结构、成分和力学性能方面对薄膜进行了表征。x射线衍射测量表明，所有薄膜均含有明显的(001)和(002)织构的TiB2晶相。当b4c溅射电流为100 mA时，薄膜硬度先升高，达到53.5 GPa左右，然后随着电流的增大而降低。随着溅射电流的增大，b4c靶层的摩擦系数基本不变。

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Structure and Properties of Ti-B-C Films Deposited by DC Magnetron Sputtering of TiB2 and B4 C Targets

The films in Ti-B-C system have been deposited onto Si (100) substrates by dual direct current magnetron sputtering of TiB2 and B4 C targets. During deposition, the sputtering parameters at the TiB2 target were unchanged, whereas sputtering current at the B4 C target was varied in the range of 50-200 mA. The films were characterized in terms of their structure, composition, and mechanical properties. The X-ray diffraction measurements showed that all the films contain only TiB2 crystalline phase of prominent (001) and (002) textures. The film hardness first increased reaching maximum value of about 53.5 GPa for films deposited with 100 mA B4 C sputtering current, and then it decreased with increasing current. The coefficient of friction of films was unchanged with increasing the sputtering current at B4 C target.

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2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP)

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