用密度泛函理论研究原始和掺杂单层(AlN)21吸附H2S有毒气体的理论研究

Jamal A. Shlaka, A. Nasria
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引用次数: 0

摘要

一直在研究掺杂的类石墨烯氮化铝P(AlN)21纳米带与缺陷(AlN)21之间的相互作用,在类石墨烯氮化铝P(AlN)21上构建了两种不同的吸附位点的分子和小有毒气体分子(H2S)。采用6-31G*(d,p)的B3LYP密度泛函理论(DFT),采用高斯09程序、高斯viw5.0软件包程序和Nanotube modeleller程序2018完成。H2S在P(AL-N)21、(C)原子掺杂P(AL-N)20薄片、D-P(AL-N)20和D-(C)原子掺杂P(AL-N)19(原子)上的吸附分别为(-0.468eV)、(-0.473 eV)、(-0.457 eV)、(-0.4478 eV)和(-0.454 eV), H2S在P(AL-N)21、(C)原子掺杂P(AL-N)20薄片、D-P(AL-N)20和D-(C、B)原子掺杂P(AL-N)19薄片中心环上的吸附分别为(-0.280 eV)、(-0.465 eV)、(-0.405 eV)、(-0.468eV)和-0.282 eV),为弱物理吸附。然而,H2S在((AlN)20- b和D-(AlN)19- b原子上的吸附(由于(Ead)大于-0.5 eV)是一种强化学吸附,由于强相互作用,((AlN)20- b和D-(AlN)19- b)可以催化或激活,通过我们获得的结果,通过掺杂和形成缺陷对P(AlN)21片进行改进,可以用于设计传感器。DOI: http://dx.doi.org/10.31257/2018/JKP/2020/120210
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Theoretical Study of H2S Toxic Gas Adsorption on Pristine and Doped Monolayer (AlN)21 Using Density Functional Theory
Been studying the interactions between graphene - like aluminium nitride P(AlN)21 nano ribbons doped and defect (AlN)21Sheet, Molecules and small toxic gas molecules ( H2S), were built for two different adsorption sites on graphene like aluminium nitride P(AlN)21. this was done by employing B3LYP density functional theory (DFT) with 6-31G*(d,p) using Gaussian 09 program, Gaussian viw5.0 package of programs and Nanotube Modeller program 2018. the adsorptions of H2S on P(AlN)21, (C) atoms-doped P(AL-N)20 sheet, D-P(AL-N)20 and D-(C)atoms-doped P(AL-N)19 (on atom) with (Ead) (-0.468eV),(-0.473 eV), (-0.457 eV), (-0.4478 eV) and (-0.454 eV), respectively, (Ead) of H2S on the center ring of the P(AL-N)21, (C) atoms-doped P(AL-N)20 sheet, D-P(AL-N)20 and D-(C,B)atoms-doped P(AL-N)19 sheet are (-0.280 eV),(-0.465 eV), (-0.405 eV), (-0.468 eV) and -0.282 eV), respectively, are weak physisorption . However, the adsorptions of H2S, on the ((AlN)20 -B and D- (AlN)19 -B), (on atom N and center ring the sheet) are a strong chemisorption because of the (Ead) larger than -0.5 eV, due to the strong interaction, the ((AlN)20-B and D-(AlN)19-B), could catalyst or activate, through the results that we obtained, which are the improvement of the sheet P(AlN)21 by doping and per forming a defect in, it that can be used to design sensors. DOI: http://dx.doi.org/10.31257/2018/JKP/2020/120210
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