基于负差分电阻MOS晶体管结构的确定性混沌环振荡器

2019 IEEE International Scientific-Practical Conference Problems of Infocommunications, Science and Technology (PIC S&T) Pub Date : 2019-10-01 DOI:10.1109/PICST47496.2019.9061330

A. Semenov, O. Osadchuk, O. Semenova, K. Koval, S. Baraban, A. Savytskyi

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引用次数: 5

摘要

本工作的目的是开发和研究一种基于负差分电阻MOS晶体管结构的在反馈回路中具有延迟元件的确定性混沌环振荡器电路。提出了一种基于MOS晶体管结构的新型有源元件电路，其静态参数为λ型I-V曲线。研制了具有负电阻的MOS晶体管结构的静态和动态I-V曲线实验装置，并取得了实验结果。本文在PSPICE软件中模拟了基于负差分电阻MOS晶体管结构的确定性混沌环振荡器。

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A Deterministic Chaos Ring Oscillator Based on a MOS Transistor Structure with Negative Differential Resistance

The aim of the work is developing and investigating an electric circuit of a deterministic chaos ring oscillator having a delay element in a feedback loop and based on a MOS transistor structure with negative differential resistance. New circuits of active elements based on MOS transistor structures with electrically controlled parameters of static λ-type I-V curves for deterministic chaos ring oscillators have been proposed. Experimental facilities have been developed and results have been obtained after investigating static and dynamic I-V curves for the MOS transistor structures with negative resistance. Results of simulating the deterministic chaos ring oscillator based on the MOS transistor structure with negative differential resistance in PSPICE software have been obtained.

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2019 IEEE International Scientific-Practical Conference Problems of Infocommunications, Science and Technology (PIC S&T)

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