紫外光照射下TiO2薄膜的导电性能

Y. Watanabe, Y. Muramoto, N. Shimizu
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引用次数: 2

摘要

TiO2具有光催化作用。当紫外光照射时,TiO2中产生电子-空穴对。光催化的来源是由于电子和空穴在表面发生的氧化和还原反应。因此,认为TiO2在紫外光照射下的光催化活性与其电子性能密切相关。本文研究了锐钛矿型TiO2薄膜在紫外光照射下的霍尔电压特性。此外,我们利用一种新技术成功地分离了由于电子和空穴而产生的两个电流分量。我们得到了以下结果:1. 与n型硅相比,霍尔电压的测量值和极性都不稳定。2. 电子的电流分量与空穴的电流分量几乎相同。从这些结果可以看出,电子迁移率和空穴迁移率的值是接近的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic conduction properties of TiO2 thin films under UV light irradiation
TiO2 has photocatalysis. When UV light is irradiated, electron-hole pairs are generated in TiO2. The source of photocatalysis is oxidation and reduction reactions at the surface due to electrons and holes. Therefore, it is considered that the photocatalytic activities are closely related to electronic properties of the TiO2 under UV light irradiation. In this paper, we obtained Hall voltage properties in anatase TiO2 thin films under UV light irradiation. Furthermore, we successfully separated two current components due to electrons and holes using a new technique. We obtained the following results; 1. The measured values and polarity of the Hall voltage were not stable compared with those of n-type silicon. 2. The current component of electrons was almost the same with that of holes. From these results, it is suggested that the values of electron mobility and hole mobility are close.
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