{"title":"利用改进的MACE工艺合成硅纳米线阵列:集成到化学传感器和太阳能电池中","authors":"M. Dusheiko, V. Koval, T. Obukhova","doi":"10.15407/spqeo25.01.058","DOIUrl":null,"url":null,"abstract":"In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"21 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells\",\"authors\":\"M. Dusheiko, V. Koval, T. Obukhova\",\"doi\":\"10.15407/spqeo25.01.058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"21 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo25.01.058\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo25.01.058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon nanowire arrays synthesized using the modified MACE process: Integration into chemical sensors and solar cells
In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.