石英晶体微天平用于评价二氯硅烷和三氯硅烷在超薄垂直冷壁化学气相沉积反应器中在环境氢中的气体运动差异

M. Otani, Toshinori Takahashi, Hitoshi Habuka, Y. Ishida, S. Ikeda, S. Hara
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引用次数: 2

摘要

研究了二氯硅烷气体和三氯硅烷气体在极简Fab系统中的不同气流运动。考虑到QCM频率对应于气体性质的实时变化,使用安装在腔室入口和排气处的两个石英晶体微天平(QCM)进行了评估,以改善和控制薄膜质量和生产率。通常,三氯硅烷气体从入口到排气的接近时间比二氯硅烷气体短。三氯硅烷气体像塞子流动一样移动,而二氯硅烷气体似乎在整个腔室中混合得很好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor
A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties. Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.
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