{"title":"硅探测器的辐射损伤","authors":"H.W. Kraner","doi":"10.1016/0167-5087(84)90114-5","DOIUrl":null,"url":null,"abstract":"<div><p>A review is presented of the effects of radiation damage on silicon detectors, which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included.</p></div>","PeriodicalId":100972,"journal":{"name":"Nuclear Instruments and Methods in Physics Research","volume":"225 3","pages":"Pages 615-618"},"PeriodicalIF":0.0000,"publicationDate":"1984-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-5087(84)90114-5","citationCount":"44","resultStr":"{\"title\":\"Radiation damage in silicon detectors\",\"authors\":\"H.W. Kraner\",\"doi\":\"10.1016/0167-5087(84)90114-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A review is presented of the effects of radiation damage on silicon detectors, which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included.</p></div>\",\"PeriodicalId\":100972,\"journal\":{\"name\":\"Nuclear Instruments and Methods in Physics Research\",\"volume\":\"225 3\",\"pages\":\"Pages 615-618\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0167-5087(84)90114-5\",\"citationCount\":\"44\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments and Methods in Physics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0167508784901145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments and Methods in Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0167508784901145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A review is presented of the effects of radiation damage on silicon detectors, which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included.
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