高注入下的光致发光成像与瞬态光电导表征:以mc-Si为例

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Pub Date : 2018-06-01 DOI:10.1109/PVSC.2018.8547920

A. Semichaevsky

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引用次数: 1

摘要

波段间光致发光(PL)成像是一种广泛用于评估固定入射光强度下非辐射复合率的实验技术。半导体(如mc-Si)中的少数载流子寿命也受到光注入水平的影响，这些可以通过瞬态光电导(TPC)来测量。本文比较了mc-Si多个样品在高达50个太阳入射强度下分流器的PL成像和TPC寿命结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoluminescence Imaging vs. Transient Photoconductance Characterization at High Injection: Case of mc-Si

Band-to-band photoluminescence (PL) imaging is one of the experimental techniques widely used to assess nonradiative recombination rates at a fixed incident light intensity. Minority carrier lifetimes in semiconductors such as mc-Si are also affected by optical injection levels These can be measured by transient photoconductance (TPC). In this paper, PL imaging of shunts and TPC lifetime results for incident intensities of up to 50 Suns are compared for multiple samples of mc-Si.

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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

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