用于光伏应用的射频溅射SnS薄膜的研究

Wei Guang-pu, Zhang Zhi-lin, Zhao Wei-ming, Gao Xiang-Hong, Chen Wei-Qun, H. Tanamura, M. Yamaguchi, H. Noguchi, T. Nagatomo, O. Omoto
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引用次数: 14

摘要

采用射频溅射法制备了硫化锡太阳能电池半导体薄膜。测定了SnS薄膜的组成、晶体结构、光学性能和电学性能。讨论了溅射条件与SnS薄膜性能的关系。以Sb为掺杂剂,结合高温(约400/spl℃)热退火,得到了n型SnS同质结太阳电池薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation on SnS film by RF sputtering for photovoltaic application
Tin sulfide (SnS) solar cell semiconductor thin films were prepared by an RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400/spl deg/C), n-type SnS homojunction solar cell thin films were obtained.
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