应用附加流平漂移工艺改善大尺寸Si (Li) p-i-n结构的电物理参数

R. Muminov, G. Ergashev, A. Saymbetov, Yo. K. Toshmurodov, S. Radzhapov, A. Mansurova, N. Japashov, Ye. A. Svanbayev
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摘要

本文介绍了使用额外的检测漂移来改善大尺寸Si (Li) p-i-n结构的电物理尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of Additional Leveling Drift Process to Improve the Electrophysical Parameters of Large Sized Si (Li) p-i-n Structures
This paper describes the use of an additional inspection drift to improve the electro physical dimensions of a large-sized Si (Li) p-i-n structure.
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