高效ZnO/CdS/InP异质结太阳能电池

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520730

Shotaro Saito, Yoshio Hashimoto, Kentara Ito

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引用次数: 6

摘要

研究了由原子束溅射透明导电窗层/化学浴沉积CdS缓冲层/p型InP单晶结构组成的异质结太阳能电池。在am1.5下获得了高达17.8%的总面积电池效率，并且基于该结构有望达到高达23%的效率。45 ~ 240 nm厚的缓冲层对减少表面溅射损伤起关键作用。研究发现，窗口材料的选择对细胞的老化性能有重要影响。当ZnO作为窗口材料时，电池的填充因子随着老化而降低。利用原子束溅射的In/sub 2/O/sub 3/窗口层，作者已经能够获得更可靠的太阳能电池。

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Efficient ZnO/CdS/InP heterojunction solar cell

Heterojunction solar cells consisting of an atom beam sputtered transparent conductive window layer/chemical bath deposited CdS buffer layer/p-type InP single crystal structure were studied. A total area cell efficiency up to 17.8% was obtained at AM 1.5 and was expected to reach as high as 23% based on this structure. The buffer layer 45 to 240 nm thick plays a key role to reduce sputter damages which would be formed at the surface of InP without this layer. It was found that the the choice of window materials has an important effect on the aging properties of the cell. When ZnO is used as a window material, the fill factor of the cell was particularly degraded by aging. Using an atom beam sputtered In/sub 2/O/sub 3/ window layer, the authors have been able to obtain more reliable solar cells.

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来源期刊

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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