一种电流源开关驱动的双频低噪声CMOS开关跨导混频器

Benqing Guo, Jing Gong
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引用次数: 3

摘要

提出了一种带电流源开关级的双频低噪声开关型有源混频器。采用大正弦本振信号驱动,避免了传统射频端口噪声被本振谐波传递的问题。采用LC谐振槽结构,利用尾部寄生电容充放电特性来缓解高频限制。该混频器原型采用65nm CMOS工艺,工作于2.4/5.2 GHz的RF双频,最大转换增益为11.2/11.6 dB, IIP3为6.7/5.5 dBm。对于5.2 GHz本LO,在fIF=10/200 MHz时测得的双侧带噪声系数(NF)分别为4.3/3.3 dB。混合器核心仅消耗8.4 mW从1.2 V电源电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Dual-Band Low-Noise CMOS Switched-Transconductance Mixer with Current-Source Switch Driven by Sinusoidal LO Signals
A dual-band low-noise switched-gm active mixer is proposed with a current-source switch stage. Large sinusoidal LO signal driving is used to avoid the traditional RF port noise transferring by LO harmonics. An LC resonance tank structure is exploited to mitigate the high-frequency limitation by the tail parasitic capacitances charging and discharging behavior. Implemented in a 65 nm CMOS process, the proposed mixer prototype operates at an RF dual-band of 2.4/5.2 GHz and provides a maximal conversion gain of 11.2/11.6 dB and IIP3 of 6.7/5.5 dBm. For 5.2 GHz LO, the dual side-band noise figure (NF) of 4.3/3.3 dB is measured at fIF=10/200 MHz, respectively. The mixer core only consumes 8.4 mW from a 1.2 V supply voltage.
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