一种高速低功耗32nm FinFET动态锁存比较器设计

Mir Muntasir Hossain, S. Biswas
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引用次数: 0

摘要

比较器是连接数字电路和模拟电路领域的桥梁。此外,满足小尺寸器件低功耗和高速度的一致性要求,使得基于MOS晶体管的电路设计接近可行设计极限的边缘。近年来,随着制造技术的进步,FinFET已成为克服MOSFET短沟道效应挑战的最有竞争力的替代方案。在本文中,我们提出了一个动态锁存比较电路,采用32纳米的PTM模型的FinFET,并进行了我们的仿真LTspice和MATLAB。我们设计的比较器在0.8V直流电源和2.5 GHz工作频率下显示出令人印象深刻的传播延迟时间仅为7.25 ps,平均功耗为45.64 μ W。此外,其性能与其他当代设计的比较验证了我们提出的比较器的霸主地位。此外,在接下来的几年里,FinFET似乎有潜力在器件建模方面带来根本性的转变,并取代传统的MOSFET导向设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High Speed and Low Power 32nm FinFET Dynamic Latch Comparator Design
A comparator establishes the bridge to connect the realms of digital and analog circuits. Moreover, the need to fulfil the consistent demand of low power and high speed small-scale devices has brought the MOS transistor based circuit design near to the edge of feasible design limit. In recent times, with the advancement in fabrication technology, FinFET has emerged as the most competent alternative with the prospective to overcome the short channel effect challenges of MOSFET. In this paper, we have presented a dynamic latch comparator circuit using 32nm PTM model of FinFET and performed our simulations with LTspice and MATLAB. Our designed comparator has shown an impressive propagation delay time of only 7.25 ps and average power consumption of 45.64 µW at 0.8V dc supply and 2.5 GHz operating frequency. Also, its performance comparisons with other contemporary designs verified the supremacy of our proposed comparator. Moreover, it seems that in the upcoming years, FinFET has the potential to bring forth radical transformation in device modeling and supersede conventional MOSFET oriented design.
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