B. Tsui, Chih-Chan Yen, Po-Hsueh Li, Chi-Pei Lu, Jui-Yao Lai
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引用次数: 0
摘要
研究了极紫外(EUV)辐照对si - oxide -氮化物- oxide - si (SONOS)存储器和纳米晶体(NC)存储器特性的影响。在SONOS存储器中，由于EUV引起的介电层中的深能级陷阱，擦除速度减慢，续航力严重下降，并且在600℃退火后无法恢复。NC存储器比SONOS存储器具有更好的EUV辐射耐受性。这项工作表明，极紫外光刻技术可能是一种没有可靠性问题的先进NC存储器的潜在解决方案。
Extreme ultra-violate exposure induced damages on non-volatile memories
The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride-Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.
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