{"title":"一个12通道并行40Gb/s 0.35μm SiGe BiCMOS激光二极管驱动器","authors":"Feng Xie, Zhiqun Li, Zhigong Wang","doi":"10.1109/SOPO.2009.5230181","DOIUrl":null,"url":null,"abstract":"Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver\",\"authors\":\"Feng Xie, Zhiqun Li, Zhigong Wang\",\"doi\":\"10.1109/SOPO.2009.5230181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver
Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.